Technical summary
The AS4002P allows the analysis of an impressive number of components.
Just insert a component into the built-in socket or connect it with the lead fitted with test clips, and the instrument displays its pinout as well as a large number of parameters characterizing it (such as gain, leakage current, saturation current, voltage drop, etc.).
Used to identify a component with an unknown or erased proprietary marking code, to match semiconductors, or to save precious time searching for characteristics, the AS4002P is an instrument that will become indispensable in any design or maintenance laboratory.
The AS4002P does not merely display the (sometimes incomplete) pinout of FETs as other instruments do. The analyzer in fact calculates a large number of parameters such as saturation current, threshold voltage, drain-source resistance, and displays the corresponding complete pinout.
Performance and simplicity:
The AS4002P allows real-time analysis, eliminating the needless and cumbersome handling usually encountered with this type of instrument. The list of detected components is impressive: bipolar transistors, Darlington transistors, field-effect transistors, enhancement and depletion MOSFETs, low-power triacs and thyristors, unijunction transistors, diodes, LEDs.
It is also able to detect the presence of a protection diode, an integrated base-emitter resistor or a short circuit. An optional module also allows the measurement of the parameters of optocouplers or optical forks.
Recognized semiconductors:
Bipolar transistors, Darlington, enhancement MOSFET, FET transistors, Triacs, Thyristors, Diodes, unijunction transistors, components faulty in short circuit, optocouplers (with OP1 option).
Measured parameters:
- HFE, VBE, IB, ICE0, collector current
- VTO threshold voltage (MOSFET and JFET)
- IDSS, RDSON (JFET)
- Forward voltage and current, leakage current (diodes)
- RBB and n (UJT)
- CTR, forward voltage/current (optocouplers, OP1 option)
- Detection of an integrated base-emitter resistor
- Detection of an integrated collector-emitter diode
