P2026090767
IGBT Transistor FQPF40N60, 600V 40A
DZD 250.00
IGBT Transistors
42 results
Power IGBT transistors in TO-247, TO-220, TO-3P and D²PAK packages: 600 V, 650 V, 1200 V and higher, for inverters, arc welding, induction heating and automotive ignition.
Related categories
42 results
20 available
DZD 380.00
DZD 750.00
P2026050013
IGBT FGD4536TM 50 A 360 V DPAK
DZD 250.00
DZD 750.00
DZD 385.00
DZD 420.00
DZD 580.00
DZD 750.00
DZD 680.00
DZD 650.00
DZD 280.00
DZD 280.00
DZD 450.00
X64CV39183
Fairchild N-Channel Automotive Ignition IGBT Transistor, ISL9V5036S3S (46A/390V) D²PAK-3 SMD
DZD 520.00
DZD 750.00
How to choose the right IGBT transistor
An IGBT combines the voltage-driven gate of a MOSFET with the low voltage drop of a bipolar transistor: it is the reference component above 400 V, where a MOSFET becomes costly. For a replacement, start from the original reference and compare three points first: the collector-emitter voltage (VCES), the collector current and the package.
- Voltage: 600 to 650 V for a single-phase inverter, an induction cooktop or a switch-mode power supply (FGH40N60UFD, MBF15T65PEH, XNF19N60T); 1200 V and above for three-phase drives and welding units (IHW40N120R3, MBQ40T120FES, FGL40N120ANDTU, HGTG20N100D2).
- Built-in diode: suffixes such as FD / UFD / KD1 indicate an antiparallel diode (FGH60N60SFD, FGA60N60UFD, IRGIB10B60KD1P), essential on inductive loads — motor, transformer, coil.
- Speed: ultrafast or fast versions (IRG4PC50FPbF, SGH80N60UFD) are used for switching at a few tens of kHz; a slow IGBT is enough at 50 Hz.
- Package: TO-247 and TO-3P for high power, insulated TO-220F when the heatsink is grounded, D²PAK (TO-263) for SMD mounting.
References described as "for automotive ignition modules" (ISL9V3040S3S, ISL9V5036S3S) are designed for ignition: they withstand repetitive avalanche conditions and cannot be replaced with an ordinary switching IGBT. The other power families are grouped under Transistors and DIAC.
Frequently asked questions
What is the difference between an IGBT and a MOSFET?
Both are gate-voltage driven, but the IGBT keeps a roughly constant voltage drop under high current, which makes it better suited to high voltage (600 V and above) and high current. The MOSFET remains preferable at low voltage and very high switching frequency.
Can a 600 V IGBT be replaced with a 1200 V one?
Yes, in terms of voltage withstand, provided the package, pinout and current rating match. Note, however, that a 1200 V rating generally has a higher conduction voltage drop, meaning slightly more losses and heating.
What does "FD" or "UFD" mean in the reference?
These suffixes indicate an IGBT with a built-in freewheeling diode, with varying speed. On an inductive load, this diode carries the current during turn-off; without it, an external diode must be added.
Which IGBT suits an induction cooktop or an inverter?
Typically 600 to 650 V with a built-in diode and fast switching, sized with a current margin above the original value. Note the reference printed on the failed component and keep the same package to preserve the heatsink mounting.
Why do IGBT prices vary so much from one to another?
The voltage-current rating, the presence of a diode, the switching speed and the manufacturer (Infineon, ONSEMI, Renesas, Magnachip, SILAN…) account for most of the difference. A fast 1200 V module is not on the same level as a few-amp TO-220F.